Title | Numerical Study of the Optical Saturation and Voltage Control of a Transistor Vertical-Cavity Surface-Emitting Laser |
Publication Type | Journal Article |
Year of Publication | 2008 |
Authors | Shi, W., L. Chrostowski, and B. Faraji |
Journal | Photonics Technology Letters, IEEE |
Volume | 20 |
Pagination | 2141 -2143 |
Date Published | dec. |
ISSN | 1041-1135 |
Keywords | collector-emitter voltage, gain compression, integrated optoelectronics, optical saturation, optoelectronic integrated circuits, surface emitting lasers, thermal effect, transistor vertical-cavity surface-emitting laser, voltage control |
Abstract | An n-p-n transistor vertical-cavity surface-emitting laser (TX-VCSEL) is described and numerically modeled by Crosslight PICS3D. For a given collector-emitter voltage V CE, the optical output power as a function of the base current IB has three regions: 1) below-threshold, 2) linear increase, and 3) saturation. Different from the saturation caused by thermal effect and gain compression, this new-observed optical saturation comes from the three-port operation of the TX-VCSEL. The saturation power is determined by V CE, with an approximately linear relationship. This enables new applications with voltage control of laser in future optoelectronic integrated circuits. |
URL | http://dx.doi.org/10.1109/LPT.2008.2007504 |
DOI | 10.1109/LPT.2008.2007504 |