Above-threshold parameter extraction and modeling for amorphous silicon thin-film transistors

TitleAbove-threshold parameter extraction and modeling for amorphous silicon thin-film transistors
Publication TypeJournal Article
Year of Publication2003
AuthorsServati, P., D. Striakhilev, and A. Nathan
JournalElectron Devices, IEEE Transactions on
Pagination2227 - 2235
Date Publishednov.
Keywordsa-Si:H thin-film transistors, above-threshold parameter extraction, active semiconducting layer, amorphous semiconductors, band-tail slope, bias-independent definition, carrier mobility, contact resistance, elemental semiconductors, field effect mobility, free-to-trapped carrier ratio, geometry-independent definition, hydrogen, linear region of operation, modeling, physical parameter extraction, saturation region of operation, semiconductor device measurement, semiconductor device models, Si:H, silicon, TFT circuit simulation, thin film transistors, threshold voltage

This paper presents modeling and parameter extraction of the above-threshold characteristics of hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) in both linear and saturation regions of operation. A bias- and geometry-independent definition for field effect mobility considering the ratio of free-to-trapped carriers is introduced, which conveys the properties of the active semiconducting layer. A method for extraction of model parameters such as threshold voltage, effective mobility, band-tail slope, and contact resistance from the measurement results is presented. This not only provides insight to the device properties, which are highly fabrication-dependent, but also enables accurate and reliable TFT circuit simulation. The techniques presented here form the basis for extraction of physical parameters for other TFTs with similar gap properties, such as organic and polymer TFTs.


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