Microstructure characterization in dc sputtered a-SiC : H films by inert gas effusion measurements

TitleMicrostructure characterization in dc sputtered a-SiC : H films by inert gas effusion measurements
Publication TypeJournal Article
Year of Publication2004
AuthorsSaleh, R., L. Munisa, and W. Beyer
JournalJournal of Non-Crystanlline Solids
Volume338
Pagination517-520
Date PublishedJUN 15
Type of ArticleProceedings Paper
ISSN0022-3093
Abstract

The effusion of argon, neon and helium as well as of hydrogen was used for microstructure characterization of dc sputtered amorphous silicon carbon (a-SiC:H) alloys deposited with various carbon and hydrogen contents. Inert gas atoms were incorporated into the material by ion implantation. Our results suggest that effusion of implanted inert gas atoms is a useful method for microstructure characterisation of a-Si:C:H films. (C) 2004 Elsevier B.V. All rights reserved.

URLhttp://dx.doi.org/10.1016/j.jnoncrysol.2004.03.032%7D
DOI10.1016/j.jnoncrysol.2004.03.032

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