Infrared absorption in a-SiC : H alloy prepared by d.c. sputtering

TitleInfrared absorption in a-SiC : H alloy prepared by d.c. sputtering
Publication TypeJournal Article
Year of Publication2003
AuthorsSaleh, R., L. Munisa, and W. Beyer
JournalThin Solid Films
Date PublishedFEB 24
Type of ArticleArticle
Keywordsamorphous materials, hydrogen, infrared spectroscopy, sputtering

Infrared absorption and hydrogen effusion were measured on silicon rich a-SiC:H films deposited by d.c. sputtering. Hydrogen concentration was changed by hydrogen implantation. The results show that the shift of the Si-H stretching absorption from 2000 to 2100 cm(-1) with increasing carbon concentration is mainly due to hydrogen-related void formation. The absorption strength of Si-H stretching and wagging absorptions are found to be independent of carbon concentration. The data suggest that both 720 and 780 cm(-1) absorptions are due to C-Si stretching vibrations with the 720 cm-' absorption presumably related to H-Si-C groups. Under the deposition condition applied, these H-Si-C groups are the predominant sites for hydrogen and carbon incorporation. (C) 2003 Elsevier Science B.V. All rights reserved.


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