Structural and electrical characterization of b-doped microcrystalline silicon thin films

TitleStructural and electrical characterization of b-doped microcrystalline silicon thin films
Publication TypeConference Paper
Year of Publication2002
AuthorsSaleh, R., and N. H. Nickel
EditorCohen, J. D., J. R. Abelson, H. Matsumura, and J. Robertson
Conference NameAMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002
Pagination327-332
PublisherMat Res Soc
Conference Location506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
ISBN Number1-55899-651-6
Abstract

In this paper we present the results for boron-doped microcrystalline silicon deposited at low temperature (230degreesC) by PECVD method. The structural and electrical properties are investigated as a function of boron concentrations using Raman, dark conductivity, hydrogen effusion and Hall effect measurements. The results show that the incorporation of boron induced an amorphization in the pc-Si:H films structure. A structural change due to boron incorporation is also accompanied by a change in hydrogen bonding environment. High conductive film of our boron-doped muc-Si:H films is attained at boron concentration 2000 ppm which consists nearly the same fraction of crystalline and amorphous phase (X-c similar to55%).

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