Surface-layer damage and responsivity in sputtered-ITO/p-GaN Schottky-barrier photodiodes

TitleSurface-layer damage and responsivity in sputtered-ITO/p-GaN Schottky-barrier photodiodes
Publication TypeJournal Article
Year of Publication2005
AuthorsPulfrey, D. L., G. Parish, D. Wee, and B. D. Nener
JournalSolid -State Electronics
Volume49
Pagination1969–1973
ISSN0038-1101
Abstract

It is postulated that donor-like nitrogen vacancies, caused by the sputtering of a Schottky-barrier metal onto p-type gallium nitride, diffuse into the GaN and form a surface layer in which both the minority-carrier lifetime and mobility are drastically reduced. Such a damaged surface layer is shown to reduce the responsivity of p-GaN Schottky-barrier photodiodes, thereby offering an explanation for the responsivity values in the range of 0.03-0.04 A/W that have been measured in experimental ITO/p-GaN devices. On making allowance for the damaged surface layer, an electron diffusion length of around 300 nm can be inferred for the undamaged p-GaN region. (C) 2005 Elsevier Ltd. All rights reserved.

URLhttp://dx.doi.org/10.1016/j.sse.2005.09.013
DOI10.1016/j.sse.2005.09.013

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