High UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes

TitleHigh UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes
Publication TypeJournal Article
Year of Publication2001
AuthorsPulfrey, D. L., J. J. Kuek, M. P. Leslie, B. D. Nener, G. Parish, U. K. Mishra, P. Kozodoy, and E. J. Tarsa
JournalElectron Devices, IEEE Transactions on
Pagination486 -489
Date Publishedmar.
Keywordsaluminium compounds, delta-doped regions, doped GaN layers, doping profiles, gallium compounds, GaN-Al0.33Ga0.67N-GaN, heterostructure diodes, high UV/solar rejection ratios, III-V semiconductors, InGaN, InGaN quantum wells, low-bandgap GaN regions, MEDICI, p-i-n photodiodes, PIN photodiodes, semiconductor device models, simulations, solar-blind detection capability

The solar-blind detection capability of heterostructure diodes employing an i-Al0.33Ga0.67N layer sandwiched between two doped GaN layers is investigated via simulations using MEDICI. It is shown that the introduction of quantum features, such as InGaN quantum wells and delta-doped regions of p-Al0.33Ge0.67N, can successfully suppress the current due to photogeneration in the low-bandgap GaN regions, leading to UV/solar rejection ratios of over three orders of magnitude


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