Electron quasi-Fermi level-Fermi level splitting at the base-emitter junction of AlGaAs/GaAs HBT's

TitleElectron quasi-Fermi level-Fermi level splitting at the base-emitter junction of AlGaAs/GaAs HBT's
Publication TypeJournal Article
Year of Publication1993
AuthorsPulfrey, D. L., and S. Searles
JournalElectron Devices, IEEE Transactions on
Volume40
Pagination1183 -1185
Date Publishedjun.
ISSN0018-9383
KeywordsAlGaAs-GaAs HBT, AlGaAs-GaAs single heterojunction bipolar transistor, aluminium compounds, base-emitter junction, current gain, double-heterojunction bipolar transistors, electron quasi-Fermi level splitting, Fermi level, gallium arsenide, heterojunction bipolar transistors, III-V semiconductors, semiconductor device models
Abstract

The amount of electron quasi-Fermi level splitting in the emitter-base junction of AlGaAs/GaAs single- and double-heterojunction bipolar transistors is computed. The degree of splitting is found to be generally small, and less pronounced in double-heterojunction devices. However, it is argued that the effect of the splitting on the current gain may be significant

URLhttp://dx.doi.org/10.1109/16.214752
DOI10.1109/16.214752

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