A-Si amoled display backplanes on flexible substrates

TitleA-Si amoled display backplanes on flexible substrates
Publication TypeConference Paper
Year of Publication2004
AuthorsNathan, A., D. Striakhilev, P. Servati, K. Sakariya, A. Sazonov, S. Alexander, S. Tao, C. H. Lee, A. Kumar, S. Sambandan, S. Jafarabadiashtiani, Y. Vygranenko, and I. W. Chan
EditorFruehauf, N., B. R. Chalamala, B. E. Gnade, and J. Jang
PublisherMat Res Soc
Conference Location506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
ISBN Number1-55899-764-4

In view of its maturity and low-cost the amorphous silicon (a-Si) technology is an attractive candidate for active matrix organic light emitting diode (AMOLED) display backplanes on flexible substrates. However, the a-Si material comes with significant intrinsic shortcomings related to speed (mobility) and stability of operation, requiring novel threshold-voltage-shift (DeltaV(T)) compensated thin-film transistor (TFT) pixel circuits and architectures to enable stable OLED operation. But given the dramatic progress in efficiency of OLED materials over recent years, the drive current requirement has been significantly lowered, thus relaxing the constraints on a-Si TFTs. For compatibility to plastic substrates, the a-Si TFT process temperature must be reduced from the conventional 300degreesC to similar to150degreesC or below, which tends to compromise the integrity of thin film materials and device performance. Hence, optimizing the TFT process for high device performance with limited thermal budget is a necessary step towards flexible AMOLEDs with a-Si backplanes. This paper reviews the design and process challenges, and specifically examines the performance of TFTs and DeltaV(T)-compensated integrated pixel driver circuits on plastic substrates with respect to current driving ability and long term stability. More importantly, lifetime tests of circuit degradation behaviour over extended time periods demonstrate highly stable drive currents and its ability to meet commercial standards.

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