Oxide interfacial layers in Au ohmic contacts to p #x2010;type Hg1-xCdxTe

TitleOxide interfacial layers in Au ohmic contacts to p #x2010;type Hg1-xCdxTe
Publication TypeJournal Article
Year of Publication1990
AuthorsKrishnamurthy, V., A. Simmons, and C. R. Helms
JournalApplied Physics Letters
Pagination925 -927
Date Publishedmar.

Annealed Au contacts to p #x2010;type Hg1-xCdxTe with thin interfacial oxide layers exhibit ohmic behavior. These interfacial layers have been produced by plasma oxidizing the Hg1-xCdxTe surface prior to Au evaporation or as a result of electroless Au deposition from AuCl3 which also produces an interfacial layer. We believe this ohmic behavior is primarily a result of the low interface state density at the interfacial layer/Hg1-xCdxTe interface and in addition, a 100 #x2009; #xb0;C anneal promotes a further reduction in the interface state density and thus lowered the contact resistance. In comparison, as #x2010;deposited and annealed Au contacts without a thin interfacial layer were rectifying with a large barrier height.


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