An improved analytic model for the metal-insulator-semiconductor tunnel junction

TitleAn improved analytic model for the metal-insulator-semiconductor tunnel junction
Publication TypeJournal Article
Year of Publication1988
AuthorsCHU, K. M., and D. L. Pulfrey
JournalElectron Devices, IEEE Transactions on
Pagination1656 -1663
Date Publishedoct.
Keywordsanalytic model, bipolar transistors, current-voltage characteristics, DC performance, electron barrier height, hole barrier height, metal-insulator-semiconductor structures, metal-insulator-semiconductor tunnel junction, one-band model, semiconductor bandgap, semiconductor device models, short-series expressions, steady-state current, thin oxide band structure, tunnel emitter transistor, tunneling probability factors, tunnelling

Two improvements to a comprehensive analytic model that describes the steady-state current in a metal-insulator-semiconductor tunnel junction are reported. The first modification replaces the conventional two-band representation of the thin oxide band structure with a one-band model. In this approach, the electron barrier height for tunneling is always less than the hole barrier height by an amount equal to the semiconductor bandgap. The second improvement enables the energy dependence of the electron and hole tunneling probability factors to be taken into account. This is accomplished by expressing the tunneling probabilities as short-series expressions. The capability of the model to accurately predict the current-voltage characteristics of MIS tunnel junctions is demonstrated by simulating the DC performance of a tunnel emitter transistor. The results are in good agreement with experimental data


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