Nonequilibrium model for semiconductor laser modulation response

TitleNonequilibrium model for semiconductor laser modulation response
Publication TypeJournal Article
Year of Publication2002
AuthorsChow, W. W., H. C. Schneider, S. W. Koch, C. - H. Chang, L. Chrostowski, and C. J. Chang-Hasnain
JournalQuantum Electronics, IEEE Journal of
Pagination402 -409
Date Publishedapr.
Keywordscarrier-carrier collisions, carrier-phonon collisions, coupled Maxwell-semiconductor-Bloch equations, current modulation, dynamic carrier population bottleneck, electron-phonon interactions, laser theory, nonequilibrium carrier distributions, nonequilibrium model, optical hole burning, optical injection, optical modulation, plasma heating, quantum well lasers, quantum-well gain structure, relaxation oscillation, relaxation rate approximation, semiconductor laser modulation response, Semiconductor lasers, semiconductor plasma, spectral hole burning, surface emitting lasers, VCSEL

Presents a laser model for describing the effects of nonequilibrium carrier distributions. The approach is based on the coupled Maxwell-semiconductor-Bloch equations, with carrier-carrier and carrier-phonon collisions treated in the relaxation rate approximation. Using examples involving relaxation oscillation, current modulation, and optical injection, we demonstrate how the model can be used to study the influences of spectral hole burning, dynamic carrier population bottleneck, and plasma heating on semiconductor laser modulation response


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