Discrete Devices


Discrete semiconductors (transistors, diodes, etc.) and optoelectonic devices available in Room 312

Integrated circuits (IC's) are listed separately

Please read the notes following this list.


  • IRFD 120 N-channel MOSFET 100V 1.3A 1.0W 0.3Ohms gfs=1.0mho
  • MJ 12010 NPN Power transistor 950V 10A 100W fT=6MHz hFE=30 (metal)
  • 1N 1206 Diode general-purpose 600V 12A (metal)
  • TIP 122 NPN Darlington power transistor 100V 5A 65W hFE=2500
  • TIP 127 PNP Darlington power transistor 100V 5A 65W hFE=2500
  • HOA 149-1 Reflective optointerrupter assembly, If=40mA(max) 30V 1mA(typ)
  • MCS 2 Optoisolator SCR Output (obsolete?)
  • 3N 201 N-channel dual-gate depletion MOSFET VHF amp (metal)
  • H 21A3 Slotted optointerrupter If=60mA(max) 30V 7mA CTR=20% tOFF=60uS
  • 2N 2219A NPN transistor 40V 0.8A 0.8W fT=300MHz hFE=100 (metal)
  • 2N 2222A NPN transistor 40V 0.8A 0.4W fT=300MHz hFE=100 (metal)
  • T 2322D Triac 400V 2.5A sensitive gate
  • 4N 25 Optoisolator transistor output If=60mA 30V 7mA CTR=20% tOFF=4uS
  • 2N 2905 PNP transistor 40V 0.6A 0.6W fT=200MHz hFE=100 (metal)
  • complement for the 2N2219A
  • 2N 2907 PNP transistor 40V 0.6A 0.4W fT=200MHz hFE=100 (metal)
  • complement for the 2N2222A or the 2N3053
  • MOC 3010 Optoisolator triac output 15mA trigger 250V 1.0Apeak
  • MOC 3011 Optoisolator triac output 10mA trigger 250V 1.0Apeak
  • MOC 3020 Optoisolator triac output 30mA trigger 400V 1.0Apeak
  • MOC3010 thru 3020 are not designed for driving loads directly
  • MUR 3020 Diode, power, ultra-fast recovery, 200V 30A (expensive)
  • MAC 3030-8 Triac 250V 8A zero-crossing-trig, to be used with opto-isolator
  • MOC 3031 Optoisolator zero-crossing triac output 15mA trigger 250V
  • 1.0Apeak (not designed for driving loads directly)
  • 2N 3053 NPN transistor 40V 0.7A 1.0W fT=100MHz hFE=50 (metal)
  • 2N 3055 NPN Power transistor 60V 15A 115W 2.5MHz hFE=50 (metal)
  • 4N 33 Optoisolator transistor output If=60mA 30V CTR=500% tOFF=70uS
  • 1N 3712 Tunnel diode
  • 2N 3904 NPN transistor 40V 0.2A 0.6W fT=300MHz hFE=100
  • 2N 3905 PNP transistor 40V 0.2A 0.6W hFE=50 fT=200MHz
  • 2N 3906 PNP transistor 40V 0.2A 0.6W hFE=100 fT=250MHz
  • complement to the 2N3904
  • IRFZ 40 N-channel Power MOSFET 50V 35A 125W 28mOhms gfs=22mho
  • IN 4005 Diode, power, general-purpose 600V 1A
  • 2N 4124 NPN transistor 25V 0.2A 0.3W fT=300MHz hFE=120
  • 2N 4126 PNP transistor 25V 0.2A 0.6W fT=250MHz hFE=120
  • complement to the 2N4124
  • 1N 4154 Diode, switching, general-purpose 35V 30mA trr=2nS
  • 2N 4351 N-channel enhancement MOSFET, low NF, no gate zeners (careful!)
  • 1N 4682 Zener diode 2.7V 500mW (expensive)
  • 1N 4684 Zener diode 3.3V 500mW (expensive)
  • 1N 4688 Zener diode 4.7V 500mW (expensive)
  • 1N 4690 Zener diode 5.6V 500mW (expensive)
  • 1N 4692 Zener diode 6.8V 500mW (expensive)
  • 1N 4694 Zener diode 8.2V 500mW (expensive)
  • 1N 4697 Zener diode 10V 500mW (expensive)
  • 1N 4728 Zener diode 3.3V 1W
  • 1N 4731 Zener diode 4.3V 1W
  • 1N 4733 Zener diode 5.1V 1W
  • 1N 4735 Zener diode 6.2V 1W
  • 1N 4739 Zener diode 9.1V 1W
  • 1N 4742 Zener diode 12V 1W
  • 1N 4744 Zener diode 15V 1W
  • MRD 500 PIN photodiode. Ultra-fast (>1GHz) but has a very smalil olitput (about 1uA with LED and 10uA with HeNe laser source)
  • 1N 5339 Zener diode 5.6V 5W
  • 1N 5379 Zener diode 110V 5W
  • 1N 5404 Diode, power, general-purpose 400V 3A
  • 1N 5408 Diode, power, general-purpose 800V 3A
  • 2N 5583 PNP RF transistor 30V 0.5A 1.0W fT=1.5GHz hFE=40
  • MAN 71A LED 7-Segment Display Common Anode
  • MAN 72 LED 7-Segment Display Common Anode
  • MAN 74 LED 7-Segment Display Common Cathode
  • IRF 740 N-channel Power MOSFET 400V 10A 125W 0.55Ohms gfs=8.7mho
  • IRFD 9120 P-channel MOSFET 100V 1.0A 1.0W 0.6Ohms gfs=1.2mho (complement to IRF120)

  • Notes:

  • For the purpose of this compilation there is a space between the part prefix (the letters) and the part number. You should remember that part numbers, generally, have no intervening spaces.
  • The part prefix generally (there are exceptions of course!) denotes the manufacturer of the part. Common ones are: 1N, 2N, 3N, 4N - JEDEC part numbers. JEDEC is not a manufacturer but a standards association. A manufacturer producing a part bearing a JEDEC number guarantees that it meets all of JEDEC's specifications and is therefore completely interchangeable with other manufacturers parts bearing the same part number.

  • IRF, IRFD, IRFZ and others - International Rectifier Corporation
  • MC, MJ, MOC, MRD and others - Motorola Semiconductor Products Inc.
  • Although I have tried to include some specifications for each part these should only be used as a guide to selecting a part as being a possible candidate for your application. A complete data sheet should be consulted to determine if the part will perform satisfactorily. For instance, the hFE of the 2N3055 is given as 50 but this is true for only one optimal operating point. In your application you will probably have a significantly lower hFE. Here is a brief guide to the specs given:

  • Voltages are VCEOmax for bipolar transistors, BVDSS for FET's, VRM for diodes, VRRM for thyristors, and VZ for zener diodes.
  • Currents are ICmax for bipolars, IDmax for FET's, IFSM for diodes, IF for LED'S, IRMS for thyristors, and typical output currents for optoelectronics.
  • Powers are PD(case) for bipolars and FET's.
  • fT is the gain-bandwidth product
  • Resistances are RDSon for power FET's
  • The specifications given are often maximum ratings. To get a reasonable lifetime from the part you would normally operate it at less than the maximum rating. For instance, for the LED in the H21A3 you should probably use at most about 20 mA instead of the rated 60mA.
  • Some specifications are achievable only in a perfect world. For instance, the maximum dissipation specification of the 2N3055 is 115W. This is only achievable if the case of the device is no warmer than 25 deg C This implies the use of an incredibly large heat sink if the room air temperature is 20 deg C. If your design must be able to work in a room warmer than 25 deg C (almost always true then you must derate from 115W.
  • There are more devices available than what is on this list. I have not included some parts that are obsolete (or almost there) nor any that were purchased for repairing equipment.
  • Part of normal engineering practice is to keep costs as low as possible. To this end I have indicated those parts that come in metal packages. Metal parts can be 2 - 5 times more expensive than a comparable plastic packaged part.
  • Chris Dumont Feb 1 1996