Title | Bipolar effects on the signal delay time in HBTs at high currents |
Publication Type | Journal Article |
Year of Publication | 1993 |
Authors | Zhou, H., and D. L. Pulfrey |
Journal | Electron Devices, IEEE Transactions on |
Volume | 40 |
Pagination | 44 -48 |
Date Published | jan. |
ISSN | 0018-9383 |
Keywords | base pushout, carrier mobility, current densities, GaAs, gallium arsenide, HBTs, heterojunction bipolar transistors, III-V semiconductors, intervalley scattering, npn transistors, phenomenological transport model, semiconductor device models, signal delay time, slow-moving holes, weakened electric field |
Abstract | The signal delay time for GaAs-based n-p-n HBTs operating at high current densities has been investigated using a phenomenological transport model. It is shown that once base pushout commences, the electronic contribution to the signal delay decreases because of the reduced intervalley scattering associated with the weakened electric field in the collector. However, more importantly for practical considerations, it is also shown that the overall signal delay time increases because of the dominant role played by the slow-moving holes in the base pushout process |
URL | http://dx.doi.org/10.1109/16.249422 |
DOI | 10.1109/16.249422 |