A phenomenological approach to estimating transit times in GaAs HBTs

TitleA phenomenological approach to estimating transit times in GaAs HBTs
Publication TypeJournal Article
Year of Publication1990
AuthorsZhou, H., D. L. Pulfrey, and M. J. Yedlin
JournalElectron Devices, IEEE Transactions on
Pagination2113 -2120
Date Publishedoct.
Keywordsbase-collector space-charge region, conduction band valleys, continuity equations, electric field, estimating transit times, exchange of electrons, GaAs, gallium arsenide, HBTs, heterojunction bipolar transistors, III-V semiconductors, Monte Carlo calculations, phenomenological approach, semiconductor device models, semiconductors, transit times of carriers, transition rates, two-valley model

A method is proposed for estimating transit times in heterojunction bipolar transistors (HBTs) which are fabricated from semiconductor materials in which the conduction band can be represented by a two-valley model. The transition times for exchange of electrons between the conduction band valleys are treated as phenomenological parameters and are shown to be linked by the electric field in the device. Incorporation of the transition rates into the continuity equations for upper and lower valley electrons yields a set of equations which can be solved under transient conditions to yield directly the transit times of carriers across the base and the base-collector space-charge region. Results from this approach are compared with Monte Carlo calculations and shown to exhibit good agreement


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