A criterion for stationary domain formation in GaAs MESFETs

TitleA criterion for stationary domain formation in GaAs MESFETs
Publication TypeJournal Article
Year of Publication1989
AuthorsZhou, H., and D. L. Pulfrey
JournalElectron Devices, IEEE Transactions on
Volume36
Pagination872 -878
Date Publishedmay.
ISSN0018-9383
Keywordsdomains, doping-density minimum-gate-length product, GaAs, gallium arsenide, gate length, III-V semiconductors, MESFETs, one-dimensional model, ordinary differential equations, phase portraits, Schottky gate field effect transistors, semiconductor device models, stationary domain formation
Abstract

A one-dimensional model that analyzes the formation of stable, stationary domains in GaAs MESFETs is presented. The method utilizes phase portraits to represent the solutions to the ordinary differential equations that characterize the situation in the channel of the device. Two necessary conditions for the formation of stationary domains are revealed. One of these relates to the gate length and can be used to improve upon the commonly used criterion for domain formation of a doping-density minimum-gate-length product of gt;1012 cm-3

URLhttp://dx.doi.org/10.1109/16.299668
DOI10.1109/16.299668

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