Molecular beam epitaxy growth of the dilute nitride GaAs1-xNx with a helical resonator plasma source

TitleMolecular beam epitaxy growth of the dilute nitride GaAs1-xNx with a helical resonator plasma source
Publication TypeJournal Article
Year of Publication2007
AuthorsZangenberg, N., D. A. Beaton, T. Tiedje, S. Tixier, M. Adamcyk, R. Kumaran, J. A. MacKenzie, E. Nodwell, E. C. Young, and G. Sproule
JournalJournal of Vaccum Science & Technology A
Volume25
Pagination850–856
ISSN0734-2101
Abstract

Dilute nitride semiconductors of composition GaAs1-xNx (0.0017 < x < 0.0115) are grown by plasma-assisted molecular beam epitaxy with a helical resonator plasma source for active nitrogen. The plasma source is self-starting at the operating pressure and can be operated at two different frequencies for which the emission spectrum is dominated by N-2 molecules or by N atoms. For the same power the molecular-rich mode is found to produce a higher flux of active nitrogen. After extended operation the plasma tube becomes contaminated with As which reduces the flux of active nitrogen and creates a below band gap emission band in the photoluminescence of the GaAs1-xNx. For the clean discharge tube no difference is observed in the photoluminescence for samples grown in the molecule-rich or atom-rich mode. (c) 2007 American Vacuum Society.

URLhttp://dx.doi.org/10.1116/1.2748800
DOI10.1116/1.2748800

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