Bismuth surfactant growth of the dilute nitride GaNxAs1-x

TitleBismuth surfactant growth of the dilute nitride GaNxAs1-x
Publication TypeJournal Article
Year of Publication2005
AuthorsYoung, E. C., S. Tixier, and T. Tiedje
JournalJournal of Crystal Growth
Volume279
Pagination316–320
ISSN0022-0248
Abstract

The presence of a bismuth surfactant is found to increase the nitrogen incorporation in the dilute nitride GaNxAs1-x by as much as 60% during growth by molecular beam epitaxy. Films with nitrogen concentrations in the 0.4-0.95% range were grown using an RF plasma source for nitrogen. The Bi surface coverage is inferred from reflection high-energy electron diffraction as a function of Bi flux and substrate temperature, and the nitrogen content is obtained by high-resolution X-ray diffraction. At constant substrate temperature the nitrogen content is found to increase with Bi coverage, which has the form of a Langmuir isotherm when plotted as a function of Bi flux. (c) 2005 Elsevier B.V. All rights reserved.

URLhttp://dx.doi.org/10.1016/j.jcrysgro.2005.02.045
DOI10.1016/j.jcrysgro.2005.02.045

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