Deoxygenation of Y-Ba-Cu-O thin films by reactive ion implantation

TitleDeoxygenation of Y-Ba-Cu-O thin films by reactive ion implantation
Publication TypeJournal Article
Year of Publication1997
AuthorsWong, A., A. Kulpa, R. Liang, P. Dosanjh, J. F. Carolan, W. N. Hardy, H. Kato, N. A. F. Jaeger, and Q. Y. Ma
JournalApplied Superconductivity, IEEE Transactions on
Pagination2134 -2137
Date Publishedjun.
Keywords30 to 90 keV, annealing, annealing conditions, barium compounds, crystal structure, high-temperature superconductors, ion implantation, magnetisation, magnetization, pulsed laser deposition, reactive ion implantation, silicon, structural dependence, superconducting properties, superconducting thin films, thin films, X-ray diffraction, YBa2Cu3O7:Si, yttrium compounds

Thin films of YBa2Cu3O7 (YBCO), grown by pulsed laser deposition, were implanted with Si+ ions at energies of 30,60, and 90 keV and at doses ranging from 1 times;1013 cm-2 to 3 times;1011 cm -2. X-ray diffraction techniques were used to investigate the structural dependence on implant parameters and annealing conditions, while d.c. magnetization was measured to characterize superconducting properties. By implanting only the upper portion of the film, implanted Si+ ions, near the surface, inhibit the superconductivity by removing oxygen from the bottom YBCO lattice which still retains its original crystal structure


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