Distribution of base dopant for transit time minimization in a bipolar transistor

TitleDistribution of base dopant for transit time minimization in a bipolar transistor
Publication TypeJournal Article
Year of Publication1996
AuthorsWinterton, S. S., S. Searles, C. J. Peters, N. G. TARR, and D. L. Pulfrey
JournalElectron Devices, IEEE Transactions on
Volume43
Pagination170 -172
Date Publishedjan.
ISSN0018-9383
Keywordsbase dopant, bipolar transistor, bipolar transistors, delays, doping profile, doping profiles, iterative methods, neutral base width, semiconductor doping, transit time minimization
Abstract

A means to determine the doping profile minimizing base transit time in a bipolar transistor is presented, assuming that the width of the neutral base is held constant. It is found that the optimum profile is not close to the exponential decrease from emitter to collector predicted by earlier studies

URLhttp://dx.doi.org/10.1109/16.477610
DOI10.1109/16.477610

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