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| Title | Ge semiconductor devices for cryogenic power electronics: Part III |
| Publication Type | Conference Paper |
| Year of Publication | 2003 |
| Authors | Ward, R. R., W. J. Dawson, L. Zhu, R. K. Kirschman, O. Mueller, R. L. Patterson, J. E. Dickman, and A. Hammoud |
| Conference Name | Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on |
| Pagination | 321 - 324 |
| Date Published | apr. |
| Keywords | 10 A, 20 K, 20 to 250 C, 270 to 270 C, 4 K, 400 V, cryogenic electronics, cryogenic power electronics, cryogenic temperature, elemental semiconductors, Ge, Ge power diodes, Ge semiconductor devices, Ge transistor, germanium, insulated gate field effect transistors, low forward voltage, low reverse leakage, low-temperature environments, power electronics, power field effect transistors, power semiconductor diodes, Si, silicon |
| Abstract | We have begun development of Ge power diodes and transistor for operation at cryogenic temperatures, down to sim; 20 K ( sim; -250 deg;C), for use in spacecraft that will encounter low-temperature environments. Ge devices have advantages over Si devices for such deep cryogenic operation. Our initial development has yielded 10-A diodes with low forward voltage and reverse leakage, and reverse breakdown up to sim; 400 V, as well as insulated-gate FETs, both operating down to sim; 4 K ( sim; minus; 270 deg;C). |
| URL | http://dx.doi.org/10.1109/ISPSD.2003.1225292 |
| DOI | 10.1109/ISPSD.2003.1225292 |