Split current quantum-dot cellular automata-modeling and simulation

TitleSplit current quantum-dot cellular automata-modeling and simulation
Publication TypeJournal Article
Year of Publication2004
AuthorsWalus, K., R. A. Budiman, and G. A. Jullien
JournalNanotechnology, IEEE Transactions on
Volume3
Pagination249 - 255
Date Publishedjun.
ISSN1536-125X
Keywordscellular automata, electron tunneling, polarization, potential barriers, quantum wells, quantum-dot cellular automata device, random diagonal, resonant tunneling currents, resonant tunnelling, semiconductor device models, semiconductor process modelling, semiconductor quantum dots, semiconductor quantum wells, semiconductor thin films, simulation, split current quantum-dot cellular automata-modeling, thin films
Abstract

We examine a novel quantum-dot cellular automata device concept using the interaction of resonant tunneling currents through a system of four quantum wells. The interaction of resonant tunneling currents forces the total current to flow predominantly in the wells along one of the two diagonals, effectively polarizing the cell. We refer to this device concept as split current quantum cellular automata (SCQCA). A free cell will settle to a random diagonal, whereas charge interactions between adjacent cells will cause the polarization to synchronize between cells. In contrast with the standard QCA cell, this device does not require tunneling between dots. Electron tunneling occurs along the vertical direction, where highly controllable deposition techniques are able to deposit very thin films and effectively tune the device parameters. Clocking of an SCQCA cell is performed by controlling the bias across the device, and none of the potential barriers between the dots need to be controlled. We believe this device concept lends itself to fabrication using currently available fabrication technologies.

URLhttp://dx.doi.org/10.1109/TNANO.2004.828527
DOI10.1109/TNANO.2004.828527

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