Band gaps of the dilute quaternary alloys GaNxAs1-x-yBiy and Ga1-yInyNxAs1-x

TitleBand gaps of the dilute quaternary alloys GaNxAs1-x-yBiy and Ga1-yInyNxAs1-x
Publication TypeJournal Article
Year of Publication2005
AuthorsTixier, S., S. E. Webster, E. C. Young, T. Tiedje, S. Francoeur, A. Mascarenhas, P. Wei, and F. Schiettekatte
JournalApplied Physics Letters
Volume86
ISSN0003-6951
Abstract

We report strong band gap photoluminescence at room temperature in dilute quaternary GaNxAs1-x-yBiy alloys (x < 1.6%,y < 2.6%) grown by molecular beam epitaxy. The band gap of the alloy can be approximated by the band gap of GaAs minus the reduction in gap associated with the effects of N and Bi alloying individually. A one-parameter method for fitting the composition dependence of the band gaps of dilute quaternary semiconductor alloys is proposed which is in excellent agreement with data for Ga1-yInyNxAs1-x. (C) 2005 American Institute of Physics.

URLhttp://dx.doi.org/10.1063/1.1886254
DOI10.1063/1.1886254

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