Depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor

TitleDepletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor
Publication TypeJournal Article
Year of Publication2007
AuthorsTakshi, A., A. Dimopoulos, and J. D. Madden
JournalApplied Physics Letters
Volume91
ISSN0003-6951
Abstract

Although the capacitance measurement is a common method to obtain the depletion width in a Schottky contact, the method is challenging in an organic Schottky junction since the capacitance is a combination of the capacitances associated with the trapped charges, bulk semiconductor, and the depletion region. The authors have implemented a metal-semiconductor field-effect transistor structure in order to estimate the depletion width in an organic Schottky contact. In the transistor the depletion width is calculated from the drain current at a small drain-source voltage. The result indicates a nonquadratic relation between the voltage and the depletion width. (C) 2007 American Institute of Physics.

URLhttp://dx.doi.org/10.1063/1.2773953
DOI10.1063/1.2773953

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