Thermal stressing of bipolar transistors with metal #x2010;insulator #x2010;semiconductor heterojunction emitters

TitleThermal stressing of bipolar transistors with metal #x2010;insulator #x2010;semiconductor heterojunction emitters
Publication TypeJournal Article
Year of Publication1988
AuthorsSzeto, N., D. L. Pulfrey, and N. G. TARR
JournalApplied Physics Letters
Volume52
Pagination1664 -1666
Date Publishedmay.
ISSN0003-6951
Abstract

Silicon bipolar junction transistors employing metal #x2010;thin insulator #x2010;semiconductor tunnel junction emitters are capable of realizing extremely high common #x2010;emitter current gains. The experimental evidence presented here indicates a possible limitation of these devices as regards their inability to withstand moderate temperature stressing.

URLhttp://dx.doi.org/10.1063/1.99051
DOI10.1063/1.99051

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