RECIPROCITY IN HETEROJUNCTION BIPOLAR-TRANSISTORS

TitleRECIPROCITY IN HETEROJUNCTION BIPOLAR-TRANSISTORS
Publication TypeJournal Article
Year of Publication1992
AuthorsSTDENIS, A., D. L. Pulfrey, and A. MARTY
JournalSolid -State Electronics
Volume35
Pagination1633-1637
Date PublishedNOV
Type of ArticleArticle
ISSN0038-1101
Abstract

By using the principle of current balancing to determine the boundary conditions for minority carriers in the base of heterojunction bipolar transistors, a general equation for the collector current is derived. This equation is then used to examine the degree to which emitter-collector current reciprocity holds for AlGaAs/GaAs single- and double-heterojunction devices. It is shown that reciprocity holds strictly in only a few instances.

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