Quasiballistic transport in GaAs-based heterojunction and homojunction bipolar transistors

TitleQuasiballistic transport in GaAs-based heterojunction and homojunction bipolar transistors
Publication TypeJournal Article
Year of Publication1998
AuthorsSt Denis, A. R., and D. L. Pulfrey
JournalJournal of Applied Physics
Volume84
Pagination4959–4965
ISSN0021-8979
Abstract

An iterative approach to solving an implicit integral relation for the electron distribution function in the base of a bipolar transistor is exploited to achieve a solution to the field-free Boltzmann transport equation. The method, which is based on one previously applied to Si homojunction transistors, is extended here to hetero- and homojunction transistors in the GaAs material system. This involves incorporating tunneling and reflection into the boundary condition for the injected flux at the emitter end of the quasineutral base, and considering anisotropic and inelastic scattering mechanisms. The ballistic, scattered, and reflected portions of the distribution are examined as the base width is reduced to values where quasiballistic transport is evident. Numerical results are presented for the carrier concentration and velocity profiles, and for the base transit time. (C) 1998 American Institute of Physics. [S0021-8979(98)07821-9].

a place of mind, The University of British Columbia

Electrical and Computer Engineering
2332 Main Mall
Vancouver, BC Canada V6T 1Z4
Tel +1.604.822.2872
Fax +1.604.822.5949
Email:

Emergency Procedures | Accessibility | Contact UBC | © Copyright 2021 The University of British Columbia