Voltage controlled operation of a transistor vertical cavity surface emitting laser

TitleVoltage controlled operation of a transistor vertical cavity surface emitting laser
Publication TypeConference Paper
Year of Publication2008
AuthorsShi, W., L. Chrostowski, and B. Faraji
Conference NameSemiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Pagination89 -90
Date Publishedsep.
Keywordsheterojunction bipolar transistors, optical saturation, optical saturation effect, Semiconductor lasers, surface emitting lasers, three-port operation, transistor vertical cavity surface emitting laser, TX-VCSEL, voltage control
Abstract

A transistor VCSEL (TX-VCSEL) is numerically modeled. A new optical saturation effect is observed, which comes from the three-port operation. This enable the voltage control of the TX-VCSEL.

URLhttp://dx.doi.org/10.1109/ISLC.2008.4636023
DOI10.1109/ISLC.2008.4636023

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