Numerical Study of the Optical Saturation and Voltage Control of a Transistor Vertical-Cavity Surface-Emitting Laser

TitleNumerical Study of the Optical Saturation and Voltage Control of a Transistor Vertical-Cavity Surface-Emitting Laser
Publication TypeJournal Article
Year of Publication2008
AuthorsShi, W., L. Chrostowski, and B. Faraji
JournalPhotonics Technology Letters, IEEE
Volume20
Pagination2141 -2143
Date Publisheddec.
ISSN1041-1135
Keywordscollector-emitter voltage, gain compression, integrated optoelectronics, optical saturation, optoelectronic integrated circuits, surface emitting lasers, thermal effect, transistor vertical-cavity surface-emitting laser, voltage control
Abstract

An n-p-n transistor vertical-cavity surface-emitting laser (TX-VCSEL) is described and numerically modeled by Crosslight PICS3D. For a given collector-emitter voltage V CE, the optical output power as a function of the base current IB has three regions: 1) below-threshold, 2) linear increase, and 3) saturation. Different from the saturation caused by thermal effect and gain compression, this new-observed optical saturation comes from the three-port operation of the TX-VCSEL. The saturation power is determined by V CE, with an approximately linear relationship. This enables new applications with voltage control of laser in future optoelectronic integrated circuits.

URLhttp://dx.doi.org/10.1109/LPT.2008.2007504
DOI10.1109/LPT.2008.2007504

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