Title | A 0.35 mu;m CMOS comparator circuit for high-speed ADC applications |
Publication Type | Conference Paper |
Year of Publication | 2005 |
Authors | Sheikhaei, S., S. Mirabbasi, and A. Ivanov |
Conference Name | Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on |
Pagination | 6134 - 6137 Vol. 6 |
Date Published | may. |
Keywords | 0.35 micron, 1 GHz, 1 V, 2 mW, 3.3 V, analogue-digital conversion, CMOS comparator circuit, CMOS integrated circuits, comparators (circuits), differential clocked comparator, dynamic latch, high gain inverters, high-speed flash ADC, logic gates, output sampler circuit, preamplifier, preamplifiers, sample and hold circuits, sampling clock generators, sampling frequency, transmission gate charge injection |
Abstract | A high-speed differential clocked comparator circuit is presented. The comparator consists of a preamplifier and a latch stage followed by a dynamic latch that operates as an output sampler. The output sampler circuit consists of a full transmission gate (TG) and two inverters. The use of this sampling stage results in a reduction in the power consumption of this high-speed comparator. Simulations show that charge injection of the TG adds constructively to the sampled signal value, therefore amplifying the sampled signal with a modest gain of 1.15. Combined with the high gain of the inverters, the sampled signals are amplified toward the rail voltages. This comparator is designed and fabricated in a 0.35 mu;m standard digital CMOS technology. Measurement results show a sampling frequency of 1 GHz with 16 mV resolution for a 1 V input signal range and 2 mW power consumption from a 3.3 V supply. The architecture can be scaled down to smaller feature sizes and lower supply voltages. |
URL | http://dx.doi.org/10.1109/ISCAS.2005.1466040 |
DOI | 10.1109/ISCAS.2005.1466040 |