Scalable silicon nanowire photodetectors

TitleScalable silicon nanowire photodetectors
Publication TypeJournal Article
Year of Publication2007
AuthorsServati, P., A. Colli, S. Hofmann, Y. Q. Fu, P. Beecher, Z. A. K. Durrani, A. C. Ferrari, A. J. Flewitt, J. Robertson, and W. I. Milne
JournalPhysica E-Low-Dimensional Systems & Nano Structures
Date PublishedAPR
Type of ArticleProceedings Paper
Keywordsnanocomposites, nanowires, photodetectors, Schottky diodes

This paper presents photodetectors having vertically stacked electrodes with sub-micron (similar to 300nm) separation based on silicon nanowire (SiNW) nanocomposites. The thin-film-like devices are made using standard photolithography instead of electron beam lithography and thus are amenable to scalable low-cost manufacturing. The processing technique is not limited to SiNWs and can be extended to different nanowires (NWs) (e.g., ZnO, CdSe) and substrates. The current-voltage characteristics show Schottky behaviour that is dependent on the properties of the contact metal and that of the pristine SiNWs. This makes these devices suitable for examination of electronic transport in SiNWs. Preliminary results for light sensitivity show promising photoresponse that is a function of effective NW density. (C) 2007 Published by Elsevier B.V.


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