Mechanically strained a-Si : H AMOLED driver circuits

TitleMechanically strained a-Si : H AMOLED driver circuits
Publication TypeConference Paper
Year of Publication2004
AuthorsServati, P., S. Tao, E. Horne, D. Striakhilev, K. Sakariya, and A. Nathan
EditorFruehauf, N., B. R. Chalamala, B. E. Gnade, and J. Jang
PublisherMat Res Soc
Conference Location506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
ISBN Number1-55899-764-4

This paper examines the variations in performance of amorphous silicon (a-Si:H) thin-film transistor (TFT) pixel driver circuits for active-matrix organic light-emitting diode (AMOLED) displays, which are subject to compressive or tensile mechanical strain. The external strain is induced by bending of the TFT substrate, and is measured by the observed changes in resistance of in-situ strain gauges. Mechanical strain impacts the performance of the circuit in terms of its drive current, which may be attributed to mobility and Fermi energy shifts in the individual TFTs. The effect of strain-induced shifts in the TFTs as a function of strain orientation (longitudinal or transverse) with respect to direction of current flow is also examined. Our measurements show that the variation in the drain current of a longitudinally oriented TFT can be as much as similar to 1.5% for strains as high as 10(-3). Proper layout and circuit design can suppress the effect of strain-induced shifts, and should be taken into consideration when designing stable TFT driver circuits for mechanically flexible AMOLED displays.

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