Low dark current and blue enhanced a-Si : H/a-SiC : H heterojunction n-i-delta(i)-p photodiode for imaging applications

TitleLow dark current and blue enhanced a-Si : H/a-SiC : H heterojunction n-i-delta(i)-p photodiode for imaging applications
Publication TypeJournal Article
Year of Publication2004
AuthorsServati, P., Y. Vygranenko, A. Nathan, S. Morrison, and A. MADAN
JournalJournal of Applied Physics
Volume96
Pagination7578-7582
Date PublishedDEC 15
Type of ArticleArticle
ISSN0021-8979
Abstract

This paper presents an a-Si:H/a-SiC:H heterojunction n-i-delta(i)-p photodiode with low dark current and enhanced short wavelength responsivity suitable for low-level light detection applications. Junction properties and carrier transport are investigated in terms of current-voltage characteristics, photocurrent transient measurements, and spectral photoresponse. It is demonstrated that introduction of a thin (similar to40 A) undoped a-SiC:H buffer (delta(i)) at the p-i interface significantly reduces the reverse dark current and recombination losses at this interface. A dark current density of similar to10 pA/cm(2) at reverse bias of 1 V is achieved for the n-i-delta(i)-p structure, in which the p-type a-SiC:H window layer and the undoped delta(i) buffer layer have a band gap of 2 eV. (C) 2004 American Institute of Physics.

URLhttp://dx.doi.org/10.1063/1.1811385%7D
DOI10.1063/1.1811385

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