Static characteristics of a-Si:H dual-gate TFTs

TitleStatic characteristics of a-Si:H dual-gate TFTs
Publication TypeJournal Article
Year of Publication2003
AuthorsServati, P., K. S. Karim, and A. Nathan
JournalElectron Devices, IEEE Transactions on
Pagination926 - 932
Date Publishedapr.
Keywordsamorphous semiconductors, bias configurations, characteristics measurement, drive-current capability, dual-gate TFTs, elemental semiconductors, forward regimes, hydrogen, leakage current, leakage currents, on-pixel electronics, reverse regimes, semiconductor device measurement, Si:H, silicon, static characteristics, subthreshold slope, thin film transistors, threshold voltage, top-gate bias

This paper examines the effect of the top gate on the static characteristics of dual-gate hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs). Both forward and reverse regimes of operation are considered. The top gate has a distinct effect on the threshold voltage, subthreshold slope, drive-current capability, and the leakage current of the TFT. In particular, the threshold voltage is found to linearly decrease with increasing top-gate bias. Specific bias configurations of the dual gate TFT critical to vertical integration of on-pixel electronics for imaging and display applications are also presented.


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