The influence of a transverse #x2010;effective #x2010;mass difference on the current at an abrupt heterojunction

TitleThe influence of a transverse #x2010;effective #x2010;mass difference on the current at an abrupt heterojunction
Publication TypeJournal Article
Year of Publication1996
AuthorsSearles, S., and D. L. Pulfrey
JournalJournal of Applied Physics
Volume79
Pagination4203 -4210
Date Publishedapr.
ISSN0021-8979
KeywordsALUMINIUM ARSENIDES, bipolar transistors, effective mass, GALLIUM ARSENIDES, HETEROJUNCTIONS, TUNNEL EFFECT
Abstract

The issue of momentum conservation, and its effect on tunneling, at an abrupt heterojunction interface between semiconductors of different transverse effective mass is considered. A thorough derivation is provided of the equations needed to calculate the electron tunnel current in forward bias. Quantitative results are presented for the current in a variety of effective #x2010;mass #x2010;difference scenarios, including that of the AlGaAs/GaAs case. The circumstances are identified in which the effective #x2010;mass difference causes the current to differ significantly from the value computed when following the usual practice of assuming the effective masses are equal. #xa9; 1996 American Institute of Physics.

URLhttp://dx.doi.org/10.1063/1.361787
DOI10.1063/1.361787

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