INFLUENCE OF DEFECTS AND TEMPERATURE ON THE LIFETIME DISTRIBUTION OF CARRIERS IN A-SI-H

TitleINFLUENCE OF DEFECTS AND TEMPERATURE ON THE LIFETIME DISTRIBUTION OF CARRIERS IN A-SI-H
Publication TypeJournal Article
Year of Publication1993
AuthorsSCHUBERT, M., R. STACHOWITZ, R. Saleh, and W. FUHS
JournalJournal of Non-Crystanlline Solids
Volume166
Pagination555-558
Date PublishedDEC
Type of ArticleProceedings Paper
ISSN0022-3093
Abstract

Non-radiative recombination in a-Si:H is studied by frequency-resolved photoluminescence spectroscopy (FRS) at excitation densities which are known to lead to geminate recombination. The measurements were performed between 4K-100K and the defect density was varied in the range 10(16)cm(-3)-5.10(17)cm(-3). The dependence of the lifetime distribution on the defect density at low temperature is quantitatively explained in a model where radiative recombination competes with non-radiative tunneling into defect states.

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