Surface pattern evolution during thermal Cl-2 etching of GaAs(001)

TitleSurface pattern evolution during thermal Cl-2 etching of GaAs(001)
Publication TypeJournal Article
Year of Publication2003
AuthorsSchmid, J. H., R. Mar, and T. Tiedje
JournalApplied Physics Letters
Volume82
Pagination4549–4551
ISSN0003-6951
Abstract

The evolution of one- and two-dimensional surface gratings during maskless thermal Cl-2 etching of GaAs is investigated using atomic force microscopy. It is found that the limiting factor for pattern transfer is the anisotropy of the etch rate with respect to crystal orientation. A simple numerical model based on an interpolation of measured etch rates is presented that can be used to calculate the evolution of surface patterns. (C) 2003 American Institute of Physics.

URLhttp://dx.doi.org/10.1063/1.1584091
DOI10.1063/1.1584091

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