Modeling of MOS varactors and characterizing the tuning curve of a 5-6 GHz LC VCO

TitleModeling of MOS varactors and characterizing the tuning curve of a 5-6 GHz LC VCO
Publication TypeConference Paper
Year of Publication2005
AuthorsSameni, P., C. Siu, K. Iniewski, M. Hamour, S. Mirabbasi, H. Djahanshahi, and J. Chana
Conference NameCircuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Pagination5071 - 5074 Vol. 5
Date Publishedmay.
Keywords5 to 6 GHz, accumulation-mode MOS varactor model, capacitance, circuit design, circuit tuning, CMOS analogue integrated circuits, CMOS process, integrated circuit design, LC VCO, LC-tank voltage-controlled oscillators, pMOS transistor, Q-factor, quality factor, semiconductor device models, SPICE model, tuning characteristic, tuning curve, varactors, voltage-controlled oscillators
Abstract

A novel accumulation-mode MOS varactor model used for characterizing the tuning curve of LC-tank voltage-controlled oscillators (VCOs) is presented. The VCO tuning characteristic is seen to depend not only on the C-V characteristics of the varactor but also on losses in the tank. Effects of variations in the tank quality factor (Q) and oscillator's swing on the VCO tuning curve are discussed. Also a practical SPICE model using a pMOS transistor to describe an accumulation-mode MOS varactor is proposed. The model has been verified in a number of structures manufactured in a standard 0.13 mu;m CMOS process and is suitable for simulation within many circuit design environments.

URLhttp://dx.doi.org/10.1109/ISCAS.2005.1465774
DOI10.1109/ISCAS.2005.1465774

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