Characterization and modeling of accumulation-mode MOS varactors

TitleCharacterization and modeling of accumulation-mode MOS varactors
Publication TypeConference Paper
Year of Publication2005
AuthorsSameni, P., C. Siu, K. Iniewski, S. Mirabbasi, H. Djahanshahi, M. Hamour, and J. Chana
Conference NameElectrical and Computer Engineering, 2005. Canadian Conference on
Pagination1554 -1557
Date Publishedmay.
Keywords5 to 6 GHz, accumulation-mode MOS varactors, CMOS integrated circuits, CMOS process, microwave oscillators, MIS devices, S-parameter measurements, S-parameters, varactors, voltage controlled oscillators, voltage-controlled oscillators
Abstract

The characterization and modeling of an accumulation-mode MOS varactor implemented in a standard 0.13 mum CMOS process is discussed. An experimental model based on the physical parameters of the device is verified. The model has been extracted, using S-parameter measurements, from different MOS varactor structures and is valid in both accumulation and depletion regions. The model has been verified both directly using the extracted values and indirectly by comparing the measured and simulated tuning curves of 5-6 GHz voltage controlled oscillators designed in the same process

URLhttp://dx.doi.org/10.1109/CCECE.2005.1557277
DOI10.1109/CCECE.2005.1557277

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