Markov model for threshold-voltage shift in amorphous silicon TFTs for variable gate bias

TitleMarkov model for threshold-voltage shift in amorphous silicon TFTs for variable gate bias
Publication TypeJournal Article
Year of Publication2005
AuthorsSambandan, S., L. Zhu, D. Striakhilev, P. Servati, and A. Nathan
JournalElectron Device Letters, IEEE
Volume26
Pagination375 - 377
Date Publishedjun.
ISSN0741-3106
Keywordsa-Si:H thin-film transistors, amorphous semiconductors, amorphous silicon TFT, amorphous silicon thin-film transistors, constant gate bias, Markov model, Markov processes, semiconductor device models, Si:H, silicon compounds, thin film transistors, threshold-voltage shift, variable gate bias, VT shift model
Abstract

Amorphous silicon (a-Si:H) thin-film transistors (TFTs) are widely used in active matrix displays and sensors, in which their operation is typically analog in nature. However, the TFT experiences a VT shift with time under gate bias, and the need for a model of the VT shift with variable gate bias is imperative for robust circuit design. A model for the VT shift under constant and variable gate bias has been presented and agrees with measurement results. The developed model can be easily represented by circuit elements and incorporated into a circuit simulator. As a proof of concept, we use the model to predict the transients of a weighted voltage subtractor circuit.

URLhttp://dx.doi.org/10.1109/LED.2005.848116
DOI10.1109/LED.2005.848116

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