The influence of boron concentrations on structural properties in disorder silicon films

TitleThe influence of boron concentrations on structural properties in disorder silicon films
Publication TypeJournal Article
Year of Publication2007
AuthorsSaleh, R., and N. H. Nickel
JournalApplied Surface Science
Volume254
Pagination580-585
Date PublishedSEP 15
Type of ArticleArticle
ISSN0169-4332
Keywordsdoped microcrystalline and polycrystalline silicon, hydrogen bonding, laser crystallization, Raman spectroscopy
Abstract

In this work we present a detailed structural of a series of B-doped hydrogenated microcrystalline silicon (mu c-Si:H) films deposited by plasma-enhanced chemical vapor deposition (PECVD) and B-doped polycrystalline silicon (poly-Si) films produced by step-by-step laser crystallization process from amorphous silicon. The influence of doping on the structural properties and structural changes during the sequential crystallization processes were monitored by Raman spectroscopy. Unlike mu c-Si:H films, that consist of a two-phase mixture of amorphous and ordered Si, partially crystallized sample shows a stratified structure with polycrystalline silicon layer at the top of an amorphous layer. With increasing doping concentration the LO-TO phonon line in poly-Si shift to smaller wave numbers and broadens asymmetrically. The results are discussed in terms of resonant interaction between optical phonons and direct intraband transitions known as a Fano resonance. In mu c-Si:H films, on the other hand, the Fano effect is not observed. The increase of doping in mu c-Si:H films suppressed the crystalline volume fraction, which leads to an amorphization in the film structure. The structural variation in both mu c-Si:H and poly-Si films leads to a change in hydrogen bonding configuration. (c) 2007 Elsevier B.V. All rights reserved.

URLhttp://dx.doi.org/10.1016/j.apsusc.2007.06.024%7D
DOI10.1016/j.apsusc.2007.06.024

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