Effects of doping on structural change and hydrogen bonding in laser crystallized polycrystalline silicon films

TitleEffects of doping on structural change and hydrogen bonding in laser crystallized polycrystalline silicon films
Publication TypeJournal Article
Year of Publication2007
AuthorsSaleh, R., and N. H. Nickel
JournalThin Solid Films
Volume515
Pagination3847-3853
Date PublishedFEB 26
Type of ArticleArticle
ISSN0040-6090
Keywordsdoped polycrystalline silicon, hydrogen bonding, hydrogen density-of-states, hydrogen effusion, laser crystallization, Raman spectroscopy
Abstract

Doped polycrystalline silicon films were produced by employing a step-by-step laser crystallization of doped hydrogenated amorphous silicon (a-Si:H). The influence of laser crystallization on structural properties and hydrogen bonding were investigated using Raman backscattering spectroscopy and hydrogen effusion measurements. Crystallization with low laser fluence, E-L, results a stratified structure with polycrystalline silicon layer at the top of an amorphous layer. In fully crystallized polycrystalline silicon the Raman lines in both P- and B-doped specimens are asymmetric, which is indicative of the Fano effect. From the hydrogen effusion spectra, the hydrogen density-of-states distribution is derived. Laser crystallization results in an increase of the hydrogen binding energy by about 0.2-0.3 eV compared to the amorphous starting material. (c) 2006 Elsevier B.V. All rights reserved.

URLhttp://dx.doi.org/10.1016/j.tsf.2006.10.105%7D
DOI10.1016/j.tsf.2006.10.105

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