Structural properties of phosphorous-doped polycrystalline silicon

TitleStructural properties of phosphorous-doped polycrystalline silicon
Publication TypeJournal Article
Year of Publication2006
AuthorsSaleh, R., and N. H. Nickel
JournalSolar Energy Materials and Solar Cells
Volume90
Pagination3456-3463
Date PublishedNOV 23
Type of ArticleProceedings Paper
ISSN0927-0248
Keywordshydrogen bonding, laser crystallization, polycrystalline silicon, Raman spectroscopy
Abstract

The structural properties and hydrogen bonding of undoped and phosphorous doped polycrystalline silicon produced by step-by-step laser dehydrogenation and crystallization technique were investigated using Raman spectroscopy and hydrogen effusion measurements. At low laser fluences, E-L, a two-layer system is created. This is accompanied by the change in hydrogen bonding. The intensity of the Si-H vibration mode at 2000 decreases faster than the one at 2100 cm(-1). This is even more pronounced in phosphorous-doped specimens. The laser crystallization results in an increase of the hydrogen binding energy by approximately 0.2-0.3 eV compared to the amorphous starting materials. (c) 2006 Elsevier B.V. All rights reserved.

URLhttp://dx.doi.org/10.1016/j.solmat.2005.10.026%7D
DOI10.1016/j.solmat.2005.10.026

a place of mind, The University of British Columbia

Electrical and Computer Engineering
2332 Main Mall
Vancouver, BC Canada V6T 1Z4
Tel +1.604.822.2872
Fax +1.604.822.5949
Email:

Emergency Procedures | Accessibility | Contact UBC | © Copyright 2021 The University of British Columbia