Title | Structural properties of phosphorous-doped polycrystalline silicon |
Publication Type | Journal Article |
Year of Publication | 2006 |
Authors | Saleh, R., and N. H. Nickel |
Journal | Solar Energy Materials and Solar Cells |
Volume | 90 |
Pagination | 3456-3463 |
Date Published | NOV 23 |
Type of Article | Proceedings Paper |
ISSN | 0927-0248 |
Keywords | hydrogen bonding, laser crystallization, polycrystalline silicon, Raman spectroscopy |
Abstract | The structural properties and hydrogen bonding of undoped and phosphorous doped polycrystalline silicon produced by step-by-step laser dehydrogenation and crystallization technique were investigated using Raman spectroscopy and hydrogen effusion measurements. At low laser fluences, E-L, a two-layer system is created. This is accompanied by the change in hydrogen bonding. The intensity of the Si-H vibration mode at 2000 decreases faster than the one at 2100 cm(-1). This is even more pronounced in phosphorous-doped specimens. The laser crystallization results in an increase of the hydrogen binding energy by approximately 0.2-0.3 eV compared to the amorphous starting materials. (c) 2006 Elsevier B.V. All rights reserved. |
URL | http://dx.doi.org/10.1016/j.solmat.2005.10.026%7D |
DOI | 10.1016/j.solmat.2005.10.026 |