Structural properties of phosphorous-doped polycrystalline silicon

TitleStructural properties of phosphorous-doped polycrystalline silicon
Publication TypeJournal Article
Year of Publication2006
AuthorsSaleh, R., and N. H. Nickel
JournalSolar Energy Materials and Solar Cells
Date PublishedNOV 23
Type of ArticleProceedings Paper
Keywordshydrogen bonding, laser crystallization, polycrystalline silicon, Raman spectroscopy

The structural properties and hydrogen bonding of undoped and phosphorous doped polycrystalline silicon produced by step-by-step laser dehydrogenation and crystallization technique were investigated using Raman spectroscopy and hydrogen effusion measurements. At low laser fluences, E-L, a two-layer system is created. This is accompanied by the change in hydrogen bonding. The intensity of the Si-H vibration mode at 2000 decreases faster than the one at 2100 cm(-1). This is even more pronounced in phosphorous-doped specimens. The laser crystallization results in an increase of the hydrogen binding energy by approximately 0.2-0.3 eV compared to the amorphous starting materials. (c) 2006 Elsevier B.V. All rights reserved.


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