Laser crystallization of compensated hydrogenated amorphous silicon thin films

TitleLaser crystallization of compensated hydrogenated amorphous silicon thin films
Publication TypeJournal Article
Year of Publication2006
AuthorsSaleh, R., N. H. Nickel, and K. V. Maydell
JournalJournal of Non-Crystanlline Solids
Volume352
Pagination1003-1007
Date PublishedJUN 15
Type of ArticleProceedings Paper
ISSN0022-3093
Keywordscrystal growth, Lasers, Raman spectroscopy, silicon
Abstract

Raman backscattering and hydrogen effusion measurements were performed on compensated, highly P- and B-doped laser crystallized polycrystalline silicon. From hydrogen effusion spectra the hydrogen chemical potential, mu(H), is determined as a function of hydrogen concentration, which can be related to the hydrogen density-of-states distribution. Interestingly, hydrogen bonding is affected by doping of the amorphous starting material. Below the hydrogen transport states, four peaks are observed in the hydrogen density-of-states at 2.0, 2.2, 2.5 and 2.8 eV. The latest peak is not observed in B-doped samples. The hydrogen effusion results will be correlated with the results obtained from Raman backscattering measurements. (c) 2006 Elsevier B.V. All rights reserved.

URLhttp://dx.doi.org/10.1016/j.jnoncrysol.2005.10.067%7D
DOI10.1016/j.jnoncrysol.2005.10.067

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