Raman spectroscopy of doped and compensated laser crystallized polycrystalline silicon thin films

TitleRaman spectroscopy of doped and compensated laser crystallized polycrystalline silicon thin films
Publication TypeJournal Article
Year of Publication2005
AuthorsSaleh, R., and N. H. Nickel
JournalSurface & Coatings Technology
Volume198
Pagination143-147
Date PublishedAUG 1
Type of ArticleProceedings Paper
ISSN0257-8972
Keywordscompensated polycrystalline silicon, laser crystallization, Raman spectroscopy
Abstract

The influence of dopant and the microstructure on hydrogen bonding in doped and compensated laser crystallized polycrystalline silicon (poly-Si) films were investigated using Raman backscattering spectrometry. With increasing boron and phosphorous concentration, the LOTO phonon line in doped as well as in compensated films shifts to smaller wave numbers and broadens asymmetrically. The results are discussed in terms of resonant interaction between optical phonons and direct intraband transitions known as a Fano resonance. Doping results also in significant changes of hydrogen bonding configurations. (c) 2004 Elsevier B.V. All rights reserved.

URLhttp://dx.doi.org/10.1016/j.surfcoat.2004.10.128%7D
DOI10.1016/j.surfcoat.2004.10.128

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