Excimer laser crystallized phosphorous-doped polycrystalline silicon

TitleExcimer laser crystallized phosphorous-doped polycrystalline silicon
Publication TypeJournal Article
Year of Publication2004
AuthorsSaleh, R., and N. H. Nickel
JournalJournal of Non-Crystanlline Solids
Volume338
Pagination143-146
Date PublishedJUN 15
Type of ArticleProceedings Paper
ISSN0022-3093
Abstract

The influence of laser dehydrogenation and crystallization of phosphorous-doped amorphous silicon (a-Si:H) on structural and hydrogen bonding configurations is investigated. After each crystallization step the samples were characterized using Raman spectroscopy measurement. The results show that in the first step of crystallization, a stratified structure is created with a poly-crystalline silicon (poly-Si) layer at the top of an amorphous layer. The crystalline volume fraction is not influenced by the incorporation of phosphor. According to Raman measurements the amount of hydrogen accommodated in large clusters increases with increasing doping concentration and after laser crystallization. (C) 2004 Elsevier B.V. All rights reserved.

URLhttp://dx.doi.org/10.1016/j.noncrysol.2004.02.040%7D
DOI10.1016/j.noncrysol.2004.02.040

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