Stability analysis of current programmed a-Si:H AMOLED pixel circuits

TitleStability analysis of current programmed a-Si:H AMOLED pixel circuits
Publication TypeJournal Article
Year of Publication2004
AuthorsSakariya, K., P. Servati, and A. Nathan
JournalElectron Devices, IEEE Transactions on
Volume51
Pagination2019 - 2025
Date Publisheddec.
ISSN0018-9383
Keywordsactive matrix, amorphous semiconductors, amorphous silicon, bias nonidealities, brightness degradation characteristics, current programmed AMOLED pixel circuits, elemental semiconductors, organic light emitting diodes, organic light-emitting diode, pixel drive current stability, self-compensating current mirror-based pixel circuits, Si:H, silicon, stability analysis, thin film transistor, thin film transistors, threshold voltage shift
Abstract

In this paper, we present self-compensating current mirror-based pixel circuits, and analyze basic stability issues to provide a deeper understanding of circuit operation, and the impact of thin film transistor bias nonidealities, which can lead to the long-term (and gradual) instabilities in pixel drive current. The analysis also provides the circuit designer a means to tailor the pixel drive current stability to the long-term brightness degradation characteristics of the organic light-emitting diode.

URLhttp://dx.doi.org/10.1109/TED.2004.838452
DOI10.1109/TED.2004.838452

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