Stability of a micromechanical pull-in voltage reference

TitleStability of a micromechanical pull-in voltage reference
Publication TypeJournal Article
Year of Publication2003
AuthorsRocha, L. A., E. Cretu, and R. F. Wolffenbuttel
JournalInstrumentation and Measurement, IEEE Transactions on
Pagination457 - 460
Date Publishedapr.
Keywords100 micron, 11 micron, 3 micron, 9.1 V, circuit stability, integrated circuit design, measurement uncertainty, microbeams, micromechanical devices, micromechanical pull-in voltage reference, on-chip voltage reference, reference circuits, reproducibility, thermal expansion, Young's modulus

The reproducibility over temperature and time of the pull-in voltage of micromechanical structures has been analyzed and verified using fabricated devices in silicon. The pull-in structures are intended for use as an on-chip voltage reference. Microbeams of 100- mu;m length, 3- mu;m width, and 11- mu;m thickness are electrostatically actuated with a very reproducible pull-in voltage at 9.1 V. Devices demonstrated an initial drift of -12 mV over 10 days and stabilized within the 500- mu;V measurement uncertainty. The measured temperature coefficient of -1 mV/K is in good agreement with the analysis and is due to the combined effect of thermal expansion and the temperature dependence of the Young's modulus in silicon.


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