Growth of InP islands on LaF3/InP(111)B heterostructures by molecular beam epitaxy

TitleGrowth of InP islands on LaF3/InP(111)B heterostructures by molecular beam epitaxy
Publication TypeJournal Article
Year of Publication1999
AuthorsRitchie, S., M. Beaudoin, T. Tiedje, and T. Pinnington
JournalJapanese Journal of Applied Physics Part 2-Letters
Volume38
PaginationL192–L194
ISSN0021-4922
Abstract

InP islands have been grown on LaF3/InP(111) heterostructures by molecular beam epitaxy. The InP islands have been imaged by atomic force microscopy and scanning electron microscopy and are observed to be faceted with three-fold symmetry as expected for (111) orientation High-resolution X-ray diffraction shows that the LaF3 substrate layer is a high quality epitaxial film. A small broadening of the InP substrate diffraction peak is interpreted as being due to inhomogeneous strain associated with the InP islands and differential thermal contraction of the LaF3 film during cooling.

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