Robust Coupled-Quantum-Well Structure for Use in Electrorefraction Modulators

TitleRobust Coupled-Quantum-Well Structure for Use in Electrorefraction Modulators
Publication TypeJournal Article
Year of Publication2007
AuthorsRistic, S., and N. A. F. Jaeger
JournalElectron Device Letters, IEEE
Volume28
Pagination30 -32
Date Publishedjan.
ISSN0741-3106
Keywordsaluminium compounds, electromagnetic wave refraction, electrorefraction modulators, gallium arsenide, III-V semiconductors, indium compounds, InGaAs-InAlAs, modulators, phase modulation, quantum wells, quantum-well modulator, robust control, robust coupled-quantum-well structure, transverse magnetic polarization modulation
Abstract

In this letter, an InGaAs/InAlAs coupled-quantum-well structure that is very robust to layer thickness and the compositional variations is reported. The robustness occurs because the structure's electrorefraction (ER) is based on the anticrossing of the two lowest energy light-hole wave functions. The structure is, thus, more appropriate for use in transverse magnetic modulators rather than in transverse electric modulators. The robustness of the structure is shown to be superior to that of a similar structure that has its ER effect based on the anticrossing of the two lowest energy electron wave functions

URLhttp://dx.doi.org/10.1109/LED.2006.887944
DOI10.1109/LED.2006.887944

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